Epitaxial intermetallic contact for compound semiconductors

Details Epitaxial intermetallic contact for compound semiconductors Epitaxial intermetallic contact for compound semiconductors

1990-06-14

1991-05-14

James, Andrew J.

357 4, 357 15, 357 16, 357 55, H01L 2972, H01L 29161, H01L 2712

Patent

active

050160745

ABSTRACT:
A class of intermetallic compound contact materials for III-V semiconductors is obtained by depositing successively and concurrently a thin film of a transition metal and a Group III metal upon the semiconductor and annealing the resultant structure, so resulting in the formation of a monocrystalline intermetallic contact. The contacts are stable at temperatures ranging from 600.degree.-900.degree. C. and may be fabricated by conventional vacuum deposition.

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