Epitaxial intermetallic contact for compound semiconductors

Details Epitaxial intermetallic contact for compound semiconductors Epitaxial intermetallic contact for compound semiconductors

1991-01-04

1991-12-24

James, Andrew J.

357 61, 357 71, 357 68, H01L 2348, H01L 2946, H01L 2962

Patent

active

050757555

ABSTRACT:
A class of intermetallic compound contact materials for III-V semiconductors is obtained by depositing successively and concurrently a thin film of a transition metal and a Group III metal upon the semiconductor and annealing the resultant structure, so resulting in the formation of a monocrystalline intermetallic contact. The contacts are stable at temperatures ranging from 600.degree.-900.degree. C. and may be fabricated by conventional vacuum deposition.

REFERENCES:
patent: 4017890 (1977-04-01), Howard et al.
patent: 4141020 (1979-02-01), Howard et al.
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4695869 (1987-09-01), Inoue et al.
patent: 4758534 (1988-07-01), Derkits, Jr. et al.
patent: 4796082 (1989-01-01), Murakami et al.
patent: 4847675 (1989-07-01), Eng
Sax et al., "Hanley's Condensed Chemical Dictionary", p. 964, Eleventh Edition, 1987.
Petrucci, "General Chemistry", pp. 176, 177 and 543, Third Edition, 1982.

Affiliated with

Also associated with

Rating

Epitaxial intermetallic contact for compound semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial intermetallic contact for compound semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial intermetallic contact for compound semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-47706