Epitaxial intermetallic contact for compound for compound semico

Details Epitaxial intermetallic contact for compound for compound semico Epitaxial intermetallic contact for compound for compound semico

1990-06-14

1991-09-24

James, Andrew J.

357 41, 357 61, 357 67, H01L 2348, H01L 2702, H01L 29161

Patent

active

050517929

ABSTRACT:
A class of intermetallic compound contact materials for III-V semiconductors is obtained by depositing successively and concurrently a thin film of a transition metal and a Group III metal upon the semiconductor and annealing the resultant structure, so resulting in the formation of a monocrystalline intermetallic contact. The contacts are stable at temperatures ranging from 600-900.degree. C. and may be fabricated by conventional vacuum deposition.

REFERENCES:
patent: 4558509 (1985-12-01), Tiwari
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4740822 (1988-04-01), Itoh
patent: 4847675 (1989-07-01), Enz

Affiliated with

Also associated with

Rating

Epitaxial intermetallic contact for compound for compound semico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial intermetallic contact for compound for compound semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial intermetallic contact for compound for compound semico will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1700309