Epitaxial integrated E-dE solid state detector telescope

Details Epitaxial integrated E-dE solid state detector telescope Epitaxial integrated E-dE solid state detector telescope

1980-01-31

1982-07-20

Edlow, Martin H.

357 15, 357 30, 357 89, H01L 2714

Patent

active

043408990

ABSTRACT:
An epitaxial integrated E-dE solid state detector telescope comprising a dE detector produced on an epitaxial layer and a E detector produced on a high purity silicon layer, both of which are fabricated on a single silicon wafer having N-N.sup.+ -N type complex structure. Said dE and E detectors are electrically isolated by a very low resistive N.sup.+ type silicon layer, which is produced on the high purity N type silicon substrate by impurity diffusion technique and is buried under the epitaxial silicon layer. Electrodes of dE and E detectors are produced on both sides of the silicon wafer by means of evaporation of gold in a vacuum. Said electrodes are reverse biased and depletion layers which act as active regions of dE and E detectors are extended from outsides toward said buried layer, providing independent charge collections of carries produced by incident charged particles in dE and E detectors by said electrodes.

REFERENCES:
patent: 4160985 (1979-07-01), Kamins

Affiliated with

Also associated with

Rating

Epitaxial integrated E-dE solid state detector telescope does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial integrated E-dE solid state detector telescope, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial integrated E-dE solid state detector telescope will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-252769