Epitaxial indium-gallium-arsenide phosphide layer on lattice-mat

Details Epitaxial indium-gallium-arsenide phosphide layer on lattice-mat Epitaxial indium-gallium-arsenide phosphide layer on lattice-mat

1974-08-12

1976-09-21

Larkins, William D.

Metal treatment

Stock

Ferrous

148175, 313 94, 313373, 331 945H, 357 18, 357 30, 357 61, H01L 29205, H01L 3100, H01S 3119

Patent

active

039822613

ABSTRACT:
An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are proportioned to provide a selected bandgap energy falling within the range of 2.23 to 0.35 electron volts; this corresponds to wavelengths of 0.55 to 3.5 microns. Near perfect lattice matched heterojunctions are provided between the epitaxial layer and the lattice matched substrate; these are useful for providing improved photocathodes and lasers, particularly in the infrared range of wavelengths between 0.8 and 2.0 microns.

REFERENCES:
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patent: 3415989 (1968-12-01), Leventhal et al.
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3644770 (1972-02-01), Bell
patent: 3672992 (1972-06-01), Schaefer
patent: 3691476 (1972-10-01), Hayashi
patent: 3801509 (1974-04-01), Kurata et al.
patent: 3814996 (1974-06-01), Enstrom et al.
patent: 3821777 (1974-06-01), James
Burnham et al., "Al.sub.x Ga.sub.1.sub.-x As.sub.1.sub.-y, Py'-GaAs.sub.1.sub.-y Py Heterostructure Laser . . . ", Appl. Phys. Lett. 17, pp. 455-457 (11-70).
Shih et al., IBM Tech. Discl. Bull., Vol. 11, No. 12, May 1969, p. 1634.

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