Epitaxial imprinting

Details Epitaxial imprinting Epitaxial imprinting

2007-05-15

2007-05-15

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S407000, C257S347000

Reexamination Certificate

active

11182381

ABSTRACT:
The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said bottom semiconductor layer; and a top semiconductor layer present on said continuous buried insulating layer, wherein said top semiconductor layer includes separate planar semiconductor regions that have different crystal orientations, said separate planar semiconductor regions are isolated from each other. The epitaxial printing process of the present invention utilizing epitaxial growth, wafer bonding and a recrystallization anneal.

REFERENCES:
patent: 7060585 (2006-06-01), Cohen et al.
Yang, M., et al., “High Performance CMOS Fabricated on Hybrid Substrate With Different Crystal Orientations”, IBM Semiconductor Research and Development Center, Yorktown Heights, NY.
Yang, M., et al., “On the Integration of CMOS with Hybrid Crystal Orientations”, IBM Semiconductor Research and Development Center, Yorktown Heights, NY.

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