Epitaxial growth reactor provided with a planetary support

Details Epitaxial growth reactor provided with a planetary support Epitaxial growth reactor provided with a planetary support

1989-03-14

1990-10-09

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118725, 156611, C23C 1600

Patent

active

049613995

ABSTRACT:
An epitaxial reactor for processing a plurality of semiconductor material wafers by exposing them to a reactive gaseous flow is provided with a support of the planetary type. The vessel in which the reactive gasses are in contact with the wafers (1) is constituted by a cylindrical member (19) having a vertical axis and which surrounds the planetary wafer support (3, 4, 5) as closely as possible. The cylindrical member is hermetically sealed at its lower and upper sections by a bottom formed by a plate (7) and a top formed by a plate (8), and a roughly flat cover (9) covers this arrangement. An inlet aperture for the reactive gas is located in the center of the cover, opposite the center of the planetary support. This central aperture has for its object to introduce the reactive gasses discharging into the vessel via several concentric funnels (26, 27, 28), whose flared ends face downwardly.

REFERENCES:
patent: 4047496 (1977-09-01), McNeilly et al.

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