Epitaxial growth process for the production of a window semicond

Fishing – trapping – and vermin destroying

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148DIG95, 437133, 437970, H01L 2120

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active

050875876

ABSTRACT:
A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.

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