Epitaxial growth of superconductors such as Nb.sub.3 Ge supercon

Details Epitaxial growth of superconductors such as Nb.sub.3 Ge supercon Epitaxial growth of superconductors such as Nb.sub.3 Ge supercon

1977-12-29

1980-12-30

Padgett, Benjamin R.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428662, 427 62, 29599, 148 115R, 252512, 252514, 252516, H01B 102

Patent

active

042424194

ABSTRACT:
Nb.sub.3 Ge, Nb.sub.3 Al and Nb.sub.3 Si are prepared in A15 structures at the exact stoichiometric ratio with epitaxial growth on selected substrates. The phase diagrams of the materials are altered by this technique and only the A15 phase is stable at the stoichiometric ratios thus permitting attainment of higher and sharper transition temperatures.

REFERENCES:
patent: 3506940 (1970-04-01), Corenzwit et al.
patent: 3824082 (1974-07-01), Vieland et al.
patent: 4043888 (1977-08-01), Gavaler
patent: 4128121 (1978-12-01), Sigsbee
patent: 4129166 (1978-12-01), Sigsbee
patent: 4129167 (1978-12-01), Sigsbee
Applied Physics Letters, vol. 29, No. 5, Sep. 1, 1976, "Synthesis and Stability of Nb.sub.3 Ge made by Electron-Beam Codeposition", pp. 314-316.
Physical Review B, vol. 12, No. 11, Dec. 1, 1975, "Phenomenological Approach to High-Transition Temperature Superconducting Alloys", pp. 4816-4824.
Physical Review, vol. 139, No. 5A, Aug. 30, 1965, "Superconductivity of Nb.sub.3 GE", pp. 1501-1503.

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