Epitaxial growth of structures with nano-dimensional...

Details Epitaxial growth of structures with nano-dimensional... Epitaxial growth of structures with nano-dimensional...

2008-09-09

2008-09-09

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S024000, C117S045000

Reexamination Certificate

active

11449385

ABSTRACT:
The features with size at least in one direction 1 μm growth method was developed by modifying liquid phase epitaxy. Number of processes was developed where duration and amplitude of the cooling pulse at the substrate interface were chosen in order to form low-dimensional features before system return to the equilibrium condition. This method allows obtaining low-dimensional features with observed quantum effect such as quantum layers, dots and superlattices. The shape of the features strongly depends on substrate orientation, stress and growth conditions.

REFERENCES:
patent: 5705224 (1998-01-01), Murota et al.
patent: 2007/0089668 (2007-04-01), Maronchuk et al.

Affiliated with

Also associated with

Rating

Epitaxial growth of structures with nano-dimensional... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial growth of structures with nano-dimensional..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial growth of structures with nano-dimensional... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3919348