Epitaxial growth of in-plane nanowires and nanowire devices

Details Epitaxial growth of in-plane nanowires and nanowire devices Epitaxial growth of in-plane nanowires and nanowire devices

2009-06-26

2011-10-04

Louie, Wai Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S022000, C438S042000, C438S043000, C438S048000, C257SE21090

Reexamination Certificate

active

08030108

ABSTRACT:
Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

REFERENCES:
patent: 6320209 (2001-11-01), Hata et al.
patent: 2003/0039286 (2003-02-01), Doi et al.
patent: 2004/0227152 (2004-11-01), Biwa et al.

Affiliated with

Also associated with

Rating

Epitaxial growth of in-plane nanowires and nanowire devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial growth of in-plane nanowires and nanowire devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial growth of in-plane nanowires and nanowire devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4270709