Epitaxial growth of germanium photodetector for CMOS imagers

Details Epitaxial growth of germanium photodetector for CMOS imagers Epitaxial growth of germanium photodetector for CMOS imagers

2006-03-07

2006-03-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to corpuscular radiation

C438S058000, C438S089000, C148SDIG010

Reexamination Certificate

active

07008813

ABSTRACT:
A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the silicon nitride layer; patterning and etching the germanium layer wherein a portion of the germanium layer is in direct physical contact with the silicon substrate; depositing a layer of silicon oxide on the germanium layer wherein the germanium layer is encapsulated by the silicon oxide layer; annealing the structure at a temperature wherein the germanium melts and the other layers remain solid; growing a second, single-crystal layer of germanium on the structure by liquid phase epitaxy; selectively removing the silicon oxide layer; and completing the germanium photodetector.

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Liu et al.,Electric-pulse-induced reversible resistance change effect in magnetoresistive films,Applied Physics Letters, vol. 76, No. 19; May 8, 2000, pp 2749-2751.

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