Epitaxial growth of dissimilar materials

Details Epitaxial growth of dissimilar materials Epitaxial growth of dissimilar materials

1977-07-14

1979-01-23

Edlow, Martin H.

357 18, 357 4, 357 61, 350 9611, 350 9614, H01L 29161, H01L 3319

Patent

active

041363507

ABSTRACT:
A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magneto optic and electro optic elements on the same substrate.

REFERENCES:
patent: 3764195 (1973-10-01), Blank
patent: 4032951 (1977-06-01), De Winter

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