Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-03-15
2011-03-15
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C257S614000, C257S615000, C257S616000
Reexamination Certificate
active
07906358
ABSTRACT:
Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.
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Choi Sang H.
King Glen C.
Park Yeonjoon
Edwards Robin W.
Jung Michael
McBride Thomas K.
Richards N Drew
The United States of America as represented by the Administrator
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