Coating apparatus – Gas or vapor deposition – Work support
Patent
1987-09-01
1989-07-18
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Work support
118715, C23C 1600
Patent
active
048482730
ABSTRACT:
In an epitaxial growth method of this invention, a first gas consisting of a hydrogen diluted gas containing a Group V element is continuously flowed on a monocrystalline substrate that is placed in a reaction chamber, the monocrystalline substrate is arranged in a gas mixing region where the first gas and a second gas containing a halogenide of a Group III element are mixed adjacent to the monocrystalline substrate, and a Group III-V compound semiconductor is grown on the monocrystalline substrate.
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Journal article entitled "Growth of GaAs on Si by MOCVD", by Masahiro Akiyama et al., Journal of Crystal Growth 69 (1984) 21-26, North Holland, Amsterdam.
Mori Hidefumi
Tsuzuki Nobuyori
Yamamoto Mitsuo
Bueker Richard
Nippon Telegraph & Telephone Corporation
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