Epitaxial growth device

Details Epitaxial growth device Epitaxial growth device

1971-08-12

1977-01-04

Yudkoff, Norman

Coating apparatus

With vacuum or fluid pressure chamber

23273R, 23294R, 118 49, 156613, 156614, 252 623GA, 427 87, B05C 1100, B01J 1732, C23C 1308

Patent

active

040007162

ABSTRACT:
A longitudinal epitaxial growth device for making a mixed crystal of III.sub.b -V.sub.b group intermetallic compound semiconductor in which a means for inverting the reaction gas flow is disposed between the gallium source and the substrate, the height of the device is reduced, and the length of the gas mixing band is made sufficiently long.

REFERENCES:
patent: 3031261 (1962-04-01), Vogel et al.
patent: 3268297 (1966-08-01), Fischer
patent: 3394390 (1968-07-01), Cheney
patent: 3441000 (1969-04-01), Burd et al.
patent: 3519399 (1970-07-01), Kyle
patent: 3633537 (1972-01-01), Howe
patent: 3675619 (1972-07-01), Burd
patent: 3690290 (1972-09-01), Jarvela et al.

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