Epitaxial growing apparatus

Details Epitaxial growing apparatus Epitaxial growing apparatus

1984-02-21

1987-02-10

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118733, 118 50, C23C 1308

Patent

active

046416030

ABSTRACT:
An epitaxial growing apparatus comprises a base plate, a quartz bell jar mounted on the base plate, and a reaction chamber defined by the base plate and the quartz bell jar, in which an epitaxial thin film layer of a semiconductor substance is formed on the substrate mounted on a support member. A metal bell jar is disposed outside the quartz bell jar so as to surround the quartz bell jar and a plurality of engaging members are operatively connected to the metal bell jar for detachably engaging the metal bell jar with the quartz bell jar.

REFERENCES:
patent: 4430959 (1984-02-01), Ebata et al.
patent: 4545327 (1985-10-01), Campbell et al.

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