Epitaxial film growth using low pressure MOCVD

Details Epitaxial film growth using low pressure MOCVD Epitaxial film growth using low pressure MOCVD

1989-02-06

1991-02-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG56, 148DIG72, 148DIG97, 148DIG110, 437 81, 437946, 437976, H01L 2120

Patent

active

049944088

ABSTRACT:
A method for growing high quality epitaxial films using low pressure MOCVD that includes providing a substrate that is misoriented from a singular plane, placing the substrate into an MOCVD reactor at a total pressure of less than 0.2 atmospheres and then growing an epitaxial film on the substrate. When providing a misoriented gallium arsenide substrate, the MOCVD reactor is set at a temperature in the range of 650 to 750 degrees centigrade to grow an aluminum gallium arsenide film. This temperature is substantially lower than that at which aluminum gallium arsenide epitaxial films are commonly grown and the resulting film has a smooth surface morphology and enhanced photoluminesence properties.

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Fukui et al., "(InAs), (GaAs), Layered Crystal Grown by MOCVD", Jpn. J. Appl. Phys., vol. 23, No. 8, Aug. 1984, pp. 2521-2523.
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Johnson et al., "AlGaAs and GaAs Grown by Atmospheric-Pressure MOCVD on Misoriented Substrates", J. Crys. Growth, 88 (1988), pp. 53-56.

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