Epitaxial film formation of a light emitting diode and the produ

Details Epitaxial film formation of a light emitting diode and the produ Epitaxial film formation of a light emitting diode and the produ

1976-05-10

1977-09-13

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148 33, 148172, H01L 21208

Patent

active

040479862

ABSTRACT:
The preparation of a semiconductor substrate for epitaxial deposition and the deposition of a solution from which the epitaxial film is formed is carried out at room temperature. The solution is deposited on the condensing surface in two discrete layering operations, the first of which ensures complete wetting of the condensing surface, the second of which ensures junction formation at a prescribed depth. The procedure is particularly useful in forming P Type epitaxial films on N-Type gallium phosphide substrates.

REFERENCES:
patent: 3533856 (1970-10-01), Panish et al.
patent: 3546032 (1970-12-01), Basart
patent: 3665888 (1972-05-01), Bergh et al.
patent: 3967987 (1976-07-01), Jones et al.

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