Epitaxial deposition of III-V compounds containing isoelectronic

Details Epitaxial deposition of III-V compounds containing isoelectronic Epitaxial deposition of III-V compounds containing isoelectronic

1974-11-11

1977-01-04

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 156612, 156613, 313498, 357 17, 357 63, 357 89, 357 90, H01L 2120, H01L 2912

Patent

active

040010562

ABSTRACT:
The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

REFERENCES:
patent: 3603833 (1971-09-01), Logan et al.
patent: 3611069 (1971-10-01), Galginaitis et al.
patent: 3634872 (1972-01-01), Umeda
patent: 3646406 (1972-02-01), Logan et al.
patent: 3687744 (1972-08-01), Ogirima et al.
patent: 3716405 (1973-02-01), Lim
Logan et al., "Efficient Green Electroluminescent Junctions in GaP," Solid-State Electronics, vol. 14, 1971, pp. 55-70.
Grenning et al., "Dislocations--GaAsP p-m Junctions," J. Applied Physics, vol. 39, No. 6, May 1968, pp. 2783-2790.
Herzog et al., "Electroluminescence of--GaAsP--Low Donor Concentrations," IBID., vol. 40, No. 4, Mar. 15, 1969, pp. 1830-1838.
Saul, R. H., "Effect of GaAs.sub.x P.sub.1.sub.-x Transition Zone--GaAs Substrates," IBID., vol. 40, No. 8, July 1969, pp. 3273-3279.
Thomas et al., "Isoelectronic Traps Due to Nitrogen in Gallium Phosphide," Physical Rev., vol. 150, No. 2, Oct. 14, 1966, pp. 680-689.
Dean et al., "Green Electroluminescence--Room Temperature," J. Applied Phys., vol. 38, No. 13, Dec. 1967, pp. 5332-5342.

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