Epitaxial deposition

Details Epitaxial deposition Epitaxial deposition

1992-12-11

1994-11-08

Kunemund, Robert

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Producing josephson junction, per se

117994, 117 91, 505729, 505475, 20419222, 20419224, C30B 2506

Patent

active

053617207

ABSTRACT:
A method of manufacture of thin film devices involves the sputtering of an epitaxial barrier layer (11) of a metallic oxide such as magnesia on to which a further epitaxial thin film (12) is deposited. The substrate is preferably alumina and the thin film may be a high temperature superconductive compound of yttrium, barium, copper and oxygen.

REFERENCES:
patent: 4921833 (1990-05-01), Takano
patent: 5059585 (1991-10-01), Sugihara et al.
patent: 5077270 (1991-12-01), Takeda et al.
patent: 5084265 (1992-01-01), Harada et al.
Kuriki et al, "Sputter Deposition and Annealing of Y-Ba-Cu-O Famson Different Substrates," Extend Abs of 1987 International Superconductivity Electronics Conf. (ISEC) 1987.
Commission of the European Communities, Eur. Workshop on High Tc Superconductors and Potential Applns., 1-3 Jul. 1987, Genova, (IT), M.G. Blamire et al, pp. 129-130, see p. 129, paragraphs 1-1.
Patent Abstracts of Japan, vol. 11, No. 390 (E-567) (2837), 19 Dec. 1987, & JP. A. 62154676 (Toyo Soda Mfg. Co. Ltd.) 9 Jul. 1987 see the whole abstract.
Japanese Journal of Applied Physics, part 2 : Letters, vol. 27, No. 3, Mar. 1988, H. Koinuma et al. pp. L376-L377, see p. L376, left-hand column, paragraph 2--right-hand column, paragraph 1.
A.I.P. Conf. Proc., No. 165, 1988, Topical Conf. on Thin Film Processing & Characterization of High Tc Super-cond., 6 Nov. 1987, Anaheim, Calif., American Institute of Physics, (US), D. Burbidge et al, see p. 88.
IBM Technical Disclosure Bulletin, vol. 27, No. 3, Aug. 1984, (New York, US) W. Anacker pp. 1529-1531 see p. 1529, paragraph 1.
Patent Abstracts of Japan, vol. 11, No. 271 (E-536) (2718), 3 Sep. 1987, & JP, A, 6272187 (Toyo Soda Mfg. Co, Ltd.) 2 Apr. 1987 see the whole abstract.
Patent Abstracts of Japan, vol. 11, No. 187 (E-516) (2634), 16 Jun. 1987, & JP, A 6215869 (Nippon Telegr. & Teleph Corp.) 24 Jan. 1987 see the whole abstract.

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