Epitaxial CMOS by oxygen implantation

Details Epitaxial CMOS by oxygen implantation Epitaxial CMOS by oxygen implantation

1988-09-09

1989-04-04

Munson, Gene M.

Fishing, trapping, and vermin destroying

357 50, 357 63, 357 91, 437 24, H01L 2702, H01L 2704, H01L 29167

Patent

active

048190403

ABSTRACT:
A technique for selectively implanting regions of semiconductor crystals with oxygen to increase their yield strength. This intentional, selective oxygen pinning technique is especially useful in causing underlying, originally oxygen-free silicon to be more resistant to plastic deformation during isolation field oxide formation processes. Oxide regions grown on a substrate cause stress at the oxide/substrate interface and typically dislocation and other stress induced crystallographic defects at and near the point of stress, especially if the substrate is essentially oxygen-free. Dislocation and other crystallographic defects that occur in the areas of device formation and p
junctions can cause junction leakage and active device degradation.

REFERENCES:
patent: 4082571 (1978-04-01), Graul et al.
patent: 4689667 (1987-08-01), Aronowitz

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