Epitaxial-base bipolar transistor

Details Epitaxial-base bipolar transistor Epitaxial-base bipolar transistor

1996-12-13

1999-03-02

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257592, H01L 27082, H01L 27102, H01L 2970

Patent

active

058775404

ABSTRACT:
A semiconductor device. A semiconductor substrate has a first conductivity. A first insulating layer is on the semiconductor substrate and has an opening so that a portion of the semiconductor substrate is exposed. A semiconductor layer has a second conductivity on the portion. A region in said semiconductor layer prevents a leakage current caused by a minute defect and faceting.

REFERENCES:
patent: 5712505 (1998-01-01), Nakamura

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