EPI wafer and method of making the same

Details EPI wafer and method of making the same EPI wafer and method of making the same

2005-08-25

2008-11-25

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257S797000, C257SE21119, C438S462000

Reexamination Certificate

active

07456079

ABSTRACT:
A method including forming alignment marks in an upper surface of a semiconductor wafer; selectively depositing a mask over the alignment marks leaving portions of the upper surface exposed; depositing an epitaxial layer over the exposed portions of the upper surface; and thereafter removing the mask.

REFERENCES:
patent: 5314837 (1994-05-01), Barber et al.
patent: 5849077 (1998-12-01), Kenney

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