EPI defect reduction using rapid thermal annealing

Details EPI defect reduction using rapid thermal annealing EPI defect reduction using rapid thermal annealing

1987-10-19

1988-11-15

Walton, Donald L.

Fishing, trapping, and vermin destroying

437247, 437248, H01L 21265, H01L 21477, H01L 21324

Patent

active

047849649

ABSTRACT:
Formation of defects in epi-layers above buried layers, particularly above arsenic buried layers, is substantially reduced by providing a brief high temperature Rapid Thermal Annealing (RTA) step after buried layer implantation, annealing-activation, and junction drive-in and before epi-layer growth. Among other things, the RTA step reduces the formation of arsenic precipitates which is frequently a consequence of slow cools commonly associated with conventional furnace activation-annealing, junction drive-in, and delineation oxidation prior to epi-layer growth.

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