Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-06-28
1999-06-15
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 454 52, 454 57, 454187, B08B 1502
Patent
active
059121840
ABSTRACT:
An enclosure provided with an air supply system, an exhaust system, and controls for manipulating the flow, temperature, dewpoint and relative humidity of the air within the enclosure are disclosed. The present invention aims to achieve with these components a system for containing chemical contaminants created during processing of silicon wafers during the chemical/mechanical, polishing/planarization processes involved in creating those wafers. The system prevents drying of the slurry used to process wafers by controlling the relative humidity within the enclosure via a humidifier, sensors and a controller that dynamically reacts to changes within the enclosure atmosphere. Preventing slurry drying is critical to maintaining high wafer throughput by reducing gouging and scraping of wafers and also by reducing equipment down time needed to clean dried slurry. An apparatus is also provided to prevent the humidifier and control system from exceeding dewpoint within the enclosure and thereby creating excess water vapor that may interfere with the wafer creation processes. Additionally, air supply within the enclosure is controlled in order to further reduce slurry drying. Enclosures operated in accordance with the present invention preferably also prevent ambient contamination of the process area surrounded by the enclosure via physical or air flow barriers. Likewise, an enclosure according to the present invention may prevent contaminants created during the processing from escaping into the clean room surrounding the enclosure, possibly damaging equipment or harming workers.
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Intelligent Enclosures Corporation
Powell William
Russell, Esq. Dean W.
Stockwell, Esq. Mitchell G.
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