Fluent material handling – with receiver or receiver coacting mea – Combined
Reexamination Certificate
2000-09-11
2001-09-04
Huson, Gregory L. (Department: 3751)
Fluent material handling, with receiver or receiver coacting mea
Combined
C277S614000
Reexamination Certificate
active
06283175
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to an enveloping device and a vertical heat-treating apparatus for a semiconductor process system, and particularly to a heat-treating apparatus which is capable of performing processes, such as oxidation, diffusion, and CVD (Chemical Vapor Deposition), in series. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or an LCD (Liquid Crystal Display) substrate, by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.
In a process of manufacturing a semiconductor device, various kinds of heat-treating apparatuses are used for subjecting a semiconductor wafer to processes, such as oxidation, diffusion, CVD, and annealing. The heat-treating apparatuses are roughly categorized into two types, i.e., a single-substrate-processing type in which wafers are processed one by one in a process chamber, and a batch-processing type, which is of a horizontal type or a vertical type, in which wafers are processed all together in a process chamber.
For example, a vertical CVD apparatus of the batch-processing type employs a vertically long process chamber for accommodating a boat in which a number of wafers are stacked with a gap therebetween. The process chamber is constituted of a cylindrical reaction tube or process tube made of quartz and a cylindrical manifold made of a metal, which is attached to the bottom of the reaction tube and has a gas inlet and a gas outlet. The manifold is provide with a port at its bottom, through which the wafer boat is loaded and unloaded to and from the reaction tube, while the wafer boat is supported on a metal lid for opening and closing the port. O-rings are used for connecting portions of the parts constituting the process chamber to ensure that the process chamber is highly airtight.
On the other hand, a vertical diffusion or oxidation apparatus of the batch-processing type also employs a vertically long process chamber for accommodating a wafer boat. The process chamber is constituted of a reaction tube made of quartz having a gas inlet and a gas outlet on its side wall. The reaction tube is provide with a port at its bottom, through which the wafer boat is loaded and unloaded to and from the reaction tube, and a quartz lid for opening and closing the port. In other words, the process chamber is entirely made of quartz to ensure that the process chamber is highly heat-resistant and highly corrosion-resistant.
The CVD apparatus described above is capable of handling a process using a high vacuum condition, but does not suit a process using a high temperature or a corrosive gas, because the apparatus employs several O-rings and the metal manifold. On the other hand, the diffusion or oxidation apparatus described above is capable of handling a process using a high temperature or a corrosive gas, but does not suit a process using a high vacuum condition, because the apparatus is not highly airtight.
Accordingly, where processes of oxidation, diffusion, and CVD are to be performed in series in a conventional semiconductor process system, heat-treating apparatuses respectively dedicated to the different processes have to be arranged. In this case, a wafer has to be transferred among the apparatuses for respective processes, thereby entailing a waste of time as well as degradation in the quality of a film formed on the wafer.
BRIEF SUMMARY OF THE INVENTION
An object of the present invention is to provide an enveloping device for a semiconductor process system, which can be adapted to various kinds of conditions.
Another object of the present invention is to provide a vertical heat-treating apparatus for a semiconductor process system, which allows processes each using a heat treatment, such as oxidation, diffusion, and CVD, to be performed in series in the apparatus.
According to a first aspect of the present invention, there is provided an enveloping device having a sealing mechanism for a semiconductor process system, comprising:
a casing having first and second parts detachably assembled to envelop a pressure-reduced space;
a member configured to apply a mechanical force to join the first and second parts;
a first flange arranged on the first part, and being provided with a looped first mirror surface, and a looped first counter surface arranged around the first mirror surface, the first mirror surface having a surface roughness of Ra (mean surface roughness)=0.06 &mgr;m or less;
a second flange arranged on the second part, and being provided with a looped second mirror surface, and a looped second counter surface arranged around the second mirror surface, the second mirror surface having a surface roughness of Ra=0.06 &mgr;m or less, the first and second mirror surfaces facing and contacting each other to form an inner seal for substantially airtightly sealing the pressure-reduced space, the first and second counter surfaces facing each other with a gap therebetween;
a looped seal member arranged in the gap such that an outer seal is formed by the first and second counter surfaces and the seal member, and a looped buffer space, substantially airtightly closed, is formed between the inner and outer seals; and
a buffer exhaust mechanism configured to exhaust and set the buffer space to a pressure-reduced state.
According to a second aspect of the present invention, there is provided a vertical heat-treating apparatus for subjecting a plurality of target substrates to a heat treatment at the same time in a semiconductor process system, comprising:
a process tube forming a pressure-reduced process space for accommodating the target substrates, and having a port at a bottom for loading and unloading the target substrates, and a first flange surrounding the port, the first flange being provided with a looped first mirror surface, and a looped first counter surface arranged around the first mirror surface, the first mirror surface having a surface roughness of Ra=0.06 &mgr;m or less;
a lid configured to open and close the port, and having a second flange for sealing the process space in cooperation with the first flange, the second flange being provided with a looped second mirror surface, and
a looped second counter surface arranged around the second mirror surface, the second mirror surface having a surface roughness of Ra=0.06 &mgr;m or less, the first and second mirror surfaces facing and contacting each other to form an inner seal for substantially airtightly sealing the process space, the first and second counter surfaces facing each other with a gap therebetween;
a looped seal member arranged in the gap, and having a looped first sheet in contact with the first counter surface, a looped second sheet in contact with the second counter surface, and a looped connecting portion airtightly connecting the first and second sheets to each other, such that an outer seal is formed by the first and second counter surfaces and the seal member, and a looped buffer space, substantially airtightly closed, is formed between the inner and outer seals;
a suction mechanism configured to vacuum-stick the first and second sheets onto the first and second counter surfaces, respectively, and including suction holes formed in the first and second flanges to have openings corresponding to the first and second sheets, respectively;
a buffer exhaust mechanism configured to exhaust and set the buffer space to a pressure-reduced state;
a holder configured to hold the target substrates to be stacked with a gap therebetween in the process tube, the holder being loaded and unloaded to and from the process tube through the port while holding the target substrates;
an elevating mechanism configured to move up and down the lid along with the holder, the second flange of the lid being pressed against
deVore Peter
Huson Gregory L.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
LandOfFree
Enveloping device and vertical heat-treating apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enveloping device and vertical heat-treating apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enveloping device and vertical heat-treating apparatus for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2443421