Enhancing the selectivity of tungsten deposition on conductor an

Details Enhancing the selectivity of tungsten deposition on conductor an Enhancing the selectivity of tungsten deposition on conductor an

1984-11-05

1985-11-12

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

134 2, 134 3, 427 82, H01L 21285, H01L 21302

Patent

active

045527830

ABSTRACT:
A method is provided for selectively depositing tungsten metal at thicknesses over 1000 angstroms or more on silicon and other conductor and semiconductor surfaces, wherein a substrate containing such surfaces is exposed to a chlorine or bromine containing solution to prevent deposition of tungsten on the insulator surfaces.

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Saraswat et al., Selective CVD of Tungsten for VLSI Technology, Stanford University, May 1984, 1-6.
Werner Kern, Purifying Si and SiO.sub.2 Surfaces With Hydrogen Peroxide, Semiconductor International, Apr. 1984, 94-99.

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