Enhancement type MESFET

Details Enhancement type MESFET Enhancement type MESFET

1996-08-13

1999-09-07

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257268, 257280, 257631, 257194, H01L 29812

Patent

active

059490950

ABSTRACT:
A carrier transfer layer of compound semiconductor material is disposed on or over a support substrate, and a gate electrode of conductive material is disposed on or over the carrier transfer layer at a partial region thereof. A cap layer of non-doped compound semiconductor material is disposed on or over the carrier transfer layer at both sides of the gate electrode. The thickness of the cap layer is 100 nm or thicker. two current electrodes are formed in ohmic contact with the carrier transfer layer. An enhancement mode MESFET is provided whose gain and output power are suppressed from being lowered.

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