Enhancement of short-circuit current by use of wide bandgap N-la

Details Enhancement of short-circuit current by use of wide bandgap N-la Enhancement of short-circuit current by use of wide bandgap N-la

1990-01-19

1991-10-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, 437 4, 437110, 148DIG160, H01L 31075, H01L 3118

Patent

active

050551418

ABSTRACT:
A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

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