Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2009-02-02
2011-10-25
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S097000, C257S103000, C257SE33023, C257SE33025, C257SE33028, C438S047000
Reexamination Certificate
active
08044417
ABSTRACT:
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
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International Search Report mailing date Mar 13, 2009, International application No. PCT/US2009/032892, International filing date Feb. 2, 2009.
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DenBaars Steven P.
Iso Kenji
Masui Hisashi
Nakamura Shuji
Speck James S.
Gates & Cooper LLP
Ngo Ngan
The Regents of the University of California
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