Enhancement of lowest order mode operation in nonplanar DH injec

Details Enhancement of lowest order mode operation in nonplanar DH injec Enhancement of lowest order mode operation in nonplanar DH injec

1978-11-30

1981-02-03

Davie, James W.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

042491428

ABSTRACT:
By employing a channel in the substrate of a GaAs-GaAlAs injection laser, the active waveguiding layer of the laser can be made to have constricted regions above the shoulders of the substrate channel. The constricted regions are characterized as being of thin cross section as compared to immediate adjacent areas of the active layer and may be provided at one terminus point of the region with a pinch-off in the active layer. This configuration, upon proper stripe placement and current confinement through this region into the substrate channel will enhance light wave propagation in this region and improve fundamental transverse mode operation.

REFERENCES:
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4166253 (1979-08-01), Small et al.
D. Botez et al., "Constricted double-heterostructure (AlGa) As diode lasers", Appl. Phys. Lett., vol. 32, No. 4, Feb. 15, 1978, pp. 261-263.

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