Enhancement of grain structure for tungsten contracts

Details Enhancement of grain structure for tungsten contracts Enhancement of grain structure for tungsten contracts

2007-03-27

2007-03-27

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C438S015000, C438S685000

Reexamination Certificate

active

10915646

ABSTRACT:
A method for enhancing grain structure of a contact material for a semiconductor device is provided. The method initiates with exposing the contact material of a contact at a first depth within the semiconductor device. Then, the exposed contact material at the first depth is coated. In one embodiment, the exposed contact material is coated via a voltage potential driven energy. The coated material is then removed, thereby exposing the contact material at a second depth within the semiconductor device. Then, the exposed material at the second depth is coated.

REFERENCES:
patent: 2002/0176972 (2002-11-01), Tsai
patent: 2003/0097888 (2003-05-01), Hirose et al.
patent: 2004/0087146 (2004-05-01), Paterson
patent: 2004/0242018 (2004-12-01), Rusli

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