Semiconductor device manufacturing: process – Bulk effect device making
Reexamination Certificate
2006-05-09
2006-05-09
Tran, Mai-Huong (Department: 2818)
Semiconductor device manufacturing: process
Bulk effect device making
C438S051000, C438S055000, C438S064000, C438S106000, C438S115000, C438S116000, C438S125000
Reexamination Certificate
active
07041611
ABSTRACT:
A protective film is applied onto a nanostructural feature supported on a sacrificial layer by energy beam assisted deposit of material from a vapor through which the beam passes. A wet etchant is applied to etch away the sacrificial layer beneath the nanostructural feature to leave it suspended as a cantilever or bridge. The film protects the structural feature from damage during etching, and may be removed after the wet etching process is completed.
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Blick Robert H.
Koenig Daniel R.
Tran Mai-Huong
Wisconsin Alumni Research Foundation
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