Enhancement of electron and hole mobilities in...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S019000, C257SE29193

Reexamination Certificate

active

10980220

ABSTRACT:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.

REFERENCES:
patent: 4282543 (1981-08-01), Ihara et al.
patent: 2002/0171104 (2002-11-01), Cable et al.
patent: 2004/0222090 (2004-11-01), Scott et al.
patent: 2004/0224480 (2004-11-01), Forbes
patent: 2005/0118754 (2005-06-01), Henley

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