Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-09
2007-01-09
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S019000, C257SE29193
Reexamination Certificate
active
10980220
ABSTRACT:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.
REFERENCES:
patent: 4282543 (1981-08-01), Ihara et al.
patent: 2002/0171104 (2002-11-01), Cable et al.
patent: 2004/0222090 (2004-11-01), Scott et al.
patent: 2004/0224480 (2004-11-01), Forbes
patent: 2005/0118754 (2005-06-01), Henley
Chan Victor
Fischetti Massimo V.
Hergenrother John M.
Leong Meikei
Rengarajan Rajesh
Ho Tu-Tu
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Tuchman Ido
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