Enhancement of class C operation of bipolar junction transistor

Details Enhancement of class C operation of bipolar junction transistor Enhancement of class C operation of bipolar junction transistor

1981-02-13

1983-04-12

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330188, H03F 100

Patent

active

043799965

ABSTRACT:
Pulsed RF operation of a class C biased BJT is enhanced using a three element system to control the BJT emitter current. The three element system includes a transformer having a secondary connected in the emitter current path. Connected to the transformer primary are the other two elements, namely, an impedance and a pulse source. The three elements cooperate to cause the emitter current to substantially conform to a desired or predetermined pulse waveform.

REFERENCES:
patent: 4322689 (1982-03-01), Schucht

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