Enhancement of an interconnect

Details Enhancement of an interconnect Enhancement of an interconnect

2006-11-14

2006-11-14

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S761000, C257S763000

Reexamination Certificate

active

07135775

ABSTRACT:
A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

REFERENCES:
patent: 4749548 (1988-06-01), Akutsu et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 6046108 (2000-04-01), Liu et al.
patent: 6110817 (2000-08-01), Tsai et al.
patent: 6211084 (2001-04-01), Ngo et al.
patent: 6261951 (2001-07-01), Buchwalter et al.
patent: 6297155 (2001-10-01), Simpson et al.
patent: 6303505 (2001-10-01), Ngo et al.
patent: 6323131 (2001-11-01), Obeng et al.
patent: 6333248 (2001-12-01), Kishimoto
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6407453 (2002-06-01), Watanabe et al.
patent: 6426294 (2002-07-01), Hirabayashi et al.
patent: 6479380 (2002-11-01), Furusawa et al.
patent: 2002/0119651 (2002-08-01), Noguchi et al.
patent: 0 881 673 (1998-12-01), None
patent: 1 050 902 (2000-11-01), None
Search Report for PCT/US 03/00525 mailed Aug. 12, 2003, 6 pages.

Affiliated with

Also associated with

Rating

Enhancement of an interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhancement of an interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancement of an interconnect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3689480