Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-11-08
2005-11-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S024000, C257S027000, C257S189000, C257S192000, C257S194000, C257S631000
Reexamination Certificate
active
06963090
ABSTRACT:
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
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Hartin Olin L.
Medendorp Nicholas
Passlack Matthias
Ray Marcus
Freescale Semiconductor Inc.
Goddard Patricia S.
Huynh Andy
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