Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-09-22
2010-06-29
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S183000
Reexamination Certificate
active
07745849
ABSTRACT:
An enhancement mode III-nitride heterojunction device that includes a region between the gate and the drain electrode thereof that is at the same potential as the source electrode thereof when the device is operating.
REFERENCES:
patent: 3697786 (1972-10-01), Smith
patent: 2006/0118809 (2006-06-01), Parikh et al.
patent: 2007/0235775 (2007-10-01), Wu et al.
patent: 2007/0278518 (2007-12-01), Chen et al.
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High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate—C.S. Suh et al.—Electrical and Computer Engineering Department—3 pages.
Farjami & Farjami LLP
International Rectifier Corporation
Le Thao P.
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