Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-06-03
2008-06-03
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S012000, C257S039000, C257S155000, C257S190000, C257S192000, C257S195000
Reexamination Certificate
active
07382001
ABSTRACT:
A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
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Office Action issued in the corresponding Korean application dated Jul. 6, 2007.
“AIGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor” —M. Asif Khan, X. Hu, G. Sumin, A. Luney, J. Yang, R. Gaska, M.S. Shur Feb. 2, 2000.
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Soward Ida M
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