Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-04-26
2011-04-26
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S183000, C257S192000, C257S201000, C257SE29246, C257SE29249
Reexamination Certificate
active
07932539
ABSTRACT:
A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).
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Cai Yong
Chen Jing
Lau Kei May
Gurley Lynne A
Miyoshi Jesse Y
The Hong Kong University of Science and Technology
Turocy & Watson LLP
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