Enhancement mode gallium nitride power devices

Details Enhancement mode gallium nitride power devices Enhancement mode gallium nitride power devices

2011-03-29

2011-03-29

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S024000, C257S027000, C257S192000, C257S195000, C257SE29246, C257SE29247, C257SE29248, C257SE29249, C257SE29250, C257SE29251, C257SE29252, C257SE29253, C257SE29254

Reexamination Certificate

active

07915643

ABSTRACT:
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

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