Enhancement-depletion Darlington device

Amplifiers – With semiconductor amplifying device – Including field effect transistor

Reexamination Certificate

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C330S296000, C330S310000

Reexamination Certificate

active

07439805

ABSTRACT:
An apparatus comprising a Darlington transistor pair comprising a first transistor and a second transistor. The first transistor may have a gate configured to receive an input signal. The second transistor may have a gate coupled to a source of the first transistor. The Darlington transistor pair may be configured to generate an output signal at a drain of the first transistor and a drain of the second transistor in response to the input signal. The first transistor may be implemented as an enhancement mode device and the second transistor may be implemented as a depletion mode device.

REFERENCES:
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patent: 5045726 (1991-09-01), Leung
patent: 5047731 (1991-09-01), Lee
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patent: 5838031 (1998-11-01), Kobayashi et al.
patent: 6437612 (2002-08-01), Dasgupta et al.
patent: 7193477 (2007-03-01), Chang et al.
RF Nitro Communications, Inc., GaInP/GaAs HBT MMIC Distributed Amplifier, pp. 88-92.
Agilent Technologies, Agilent HMMC-5200 DC-20 GHz HBT Series-Shunt Amplifier, Oct. 10, 2003, pp. 1-6.
WJ Communications, Inc. AH1 High Dynamic Range Amplifier, Jun. 2005, pp. 1-6.

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