Enhancement-and depletion-type field effect transistors connecte

Details Enhancement-and depletion-type field effect transistors connecte Enhancement-and depletion-type field effect transistors connecte

1975-06-05

1976-11-30

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307214, 307216, 307238, 307304, 340173FF, 357 23, H03K 1908, H03K 1920, H03K 1940, G11C 1140

Patent

active

039951723

ABSTRACT:
A circuit comprising the parallel connection of an enhancement-and a depletion-type FET which exhibits reduced power and improved performance for both logic as well as memory circuits.

REFERENCES:
patent: 3430112 (1969-02-01), Hilbourne
patent: 3694673 (1972-09-01), Au
patent: 3775693 (1973-11-01), Proebsting
kemerer, "Storage Cell Using Double-Threshold Field-Effect Transistors;" IBM Tech. Discl. Bull.; vol. 14, No. 4, pp. 1077-1078; Sept. 1971.

Affiliated with

Also associated with

Rating

Enhancement-and depletion-type field effect transistors connecte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhancement-and depletion-type field effect transistors connecte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancement-and depletion-type field effect transistors connecte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1056870