Enhanced transistor gate drive

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S108000, C327S374000, C327S379000, C327S437000, C327S378000

Reexamination Certificate

active

07952418

ABSTRACT:
An enhanced transistor gate drive is disclosed in which a pair of Kelvin sense leads measure the voltage potential across at the gate and source of the transistor. The difference in the voltage potential of the Kelvin sense lead from the gate and the Kelvin sense lead of the source is provided to a voltage controlled current source, which compares the output of the voltage differentiator to an oscillating voltage input. Changes to the voltage difference between the Kelvin sense connectors will result in more or less voltage being applied at the gate of the transistor, thereby parasitic inductance in the transistor from causing the device to switch on and off.

REFERENCES:
patent: 5332938 (1994-07-01), McEwan
patent: 6107860 (2000-08-01), Vinciarelli
patent: 6593622 (2003-07-01), Kinzer et al.
patent: 2002/0171455 (2002-11-01), Tsuchida et al.
patent: 2006/0006922 (2006-01-01), Sander

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