Enhanced toggle-MRAM memory device

Details Enhanced toggle-MRAM memory device Enhanced toggle-MRAM memory device

2006-10-30

2009-08-04

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S427000, C257SE29323, C365S158000

Reexamination Certificate

active

07569902

ABSTRACT:
A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic parameters. Consequently, this device enhances the performance of MRAM's, especially in its large operating field margin and high thermal stability characteristics with a low current.

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