Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-04-07
1993-08-31
Hille, Rolf
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505729, 257 33, 257 35, 257 39, 427 62, 427 63, H01L 3922, B05D 512, H01B 1200
Patent
active
052409066
ABSTRACT:
An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.
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Bednorz Johannes G.
Mannhart Jochen D.
Mueller Carl A.
Schlom Darrell
Hille Rolf
International Business Machines - Corporation
Lau Richard
Saadat Mahshid
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