Enhanced superconducting field-effect transistor

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505701, 505729, 257 33, 257 35, 257 39, 427 62, 427 63, H01L 3922, B05D 512, H01B 1200

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052409066

ABSTRACT:
An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.

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