Enhanced silicide adhesion to semiconductor and insulator surfac

Details Enhanced silicide adhesion to semiconductor and insulator surfac Enhanced silicide adhesion to semiconductor and insulator surfac

1983-01-19

1986-04-08

Carroll, James J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 4, 357 65, 357 71, 427 89, H01L 2712, H01L 2348, H01L 2946, H01L 2954

Patent

active

045816271

ABSTRACT:
The invention provides a semiconductor device in which an insulating film or a semiconductor film is firmly bonded with a metal silicide film, and also provides a method for manufacturing the same. The semiconductor device has a semiconductor substrate with an insulating film or a semiconductor film formed thereon, a carbon layer formed on the insulating film or the semiconductor film, and a metal silicide film formed on the carbon layer. Carbon atoms are thermally diffused by heating from the carbon layer into the insulating film or the semiconductor film and into the metal silicide film.

REFERENCES:
patent: 4395813 (1983-08-01), Roth et al.
patent: 4404235 (1983-09-01), Tarng et al.
H. Roesch et al., "Improving the Adherence of Conductive Patterns to Insulators", IBM Technical Disclosure Bulletin, vol. 15, (1973), p. 3087.
S. P. Muraka et al., "Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects," IEEE Transactions on Electron Devices, vol. ED-27 (1980), pp. 1409-1417.
M. A. Nicolet, "Diffusion Barriers in Thin Films," Thin Solid Films, vol. 52 (1978), pp. 415-443.
L. Berenbaum, "Coating Narrow Resistive Lines to Increase Electromigration Resistance", IBM Technical Disclosure Bulletin, vol. 17 (1975), p. 3280.
Mochizuki et al., "A New MOS Process Using MoSi.sub.2 as a Gate Material", 9th Conference on Solid State Devices, Tokyo 1977, Japanese Journal of Applied Physics, vol. 17 (1978) Supplement 17-1, pp. 37-42.

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