Enhanced resolution wafer thickness measurement system

Details Enhanced resolution wafer thickness measurement system Enhanced resolution wafer thickness measurement system

1992-11-18

1995-05-30

Voeltz, Emanuel T.

Boots, shoes, and leggings

364561, 324662, 324671, G01B 702

Patent

active

054208033

ABSTRACT:
A method and apparatus involving the use of a thickness measurement probe having a predetermined resolution to measure the thickness of a wafer over a two-dimensional area of the wafer, the method including sampling the measured thickness of the wafer with the probe to generate an image of the two-dimensional area of the wafer, the image being a two-dimensional array of measurements, each measurement representing a measurement of the thickness of a different region of the two-dimensional area, the two-dimensional array of measurements being represented by a measured column tensor; and left multiplying the measured column tensor by a reconstruction tensor T to obtain an estimate of a desired measurement column tensor, where the reconstruction tensor T is equal to R.sub.dm R.sub.mm.sup.-1, R.sub.dm being a cross-covariance tensor computed for d, a desired measurement column tensor, and m, the measured column tensor, and R.sub.mm being an auto-covariance tensor computed for m, and wherein the estimate of a desired measurement column tensor represents an estimate of measurements that would be obtained from a hypothetical probe assembly having a different resolution from the first mentioned probe.

REFERENCES:
patent: 4748410 (1988-05-01), Macovski
patent: 4849916 (1989-07-01), Abbe et al.
patent: 4947323 (1990-08-01), Smith

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