Enhanced radiative zone-melting recrystallization method and app

Details Enhanced radiative zone-melting recrystallization method and app Enhanced radiative zone-melting recrystallization method and app

1988-09-30

1992-12-22

Breneman, R. Bruce

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422245, C30B 3500

Patent

active

051732718

ABSTRACT:
A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.

REFERENCES:
patent: 4371421 (1983-02-01), Fan et al.
patent: 4535227 (1985-08-01), Shimizu
patent: 4535228 (1985-08-01), Mimura et al.
patent: 4578143 (1986-03-01), Arai
patent: 4578144 (1986-03-01), Hiramoto
patent: 4659422 (1987-04-01), Sakurai
patent: 4694143 (1987-09-01), Nishimura et al.
patent: 4888302 (1989-12-01), Ramesh
Robinson et al. "Large Area Recrystallization of Polysilicon with Tungsten-Halogen Lamps" J. Crys. Growth 63(1983) pp. 484-492.

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